Applications
ICP-RIE is a versatile and highly efficient plasma etching technique. Independent control of plasma density through the ICP source means high density plasmas can be realized without increasing DC bias on the lower electrode. High etch rates, increased selectivity to mask, improved ion directionality and low device damage are all realized using this technique.
Capabilities
- Quartz clamp with continuous contact - 100mm, 150mm, and 200mm wafers
- Process gases: Ar, N2, He, O2, SF6, CF4, CHF3, C4F8, C3H2F4, BCL3, CL2
- Cobra300 3kW ICP etch source
- Cold Mode Protection Ring
- Fluid-cooled / electrically-heated etch lower electrode kit
- Ocean Optics variable wavelength optical end point detection EDP kit
- System configured with dual gas pods, one to supply the chamber and one to supply the gas ring
Estimated Arrival
March 2025
Projected Availability
June 2025